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| GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 260 LD 262 ... LD 269 7.4 7.0 1.9 1.7 0.5 0.4 2.54 mm spacing 2.7 2.5 0.25 0.15 2.1 1.5 0.4 A GEO06367 A Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlassigkeit q Gehausegleich mit BPX 80-Serie Features q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Same package as BPX 80 series Applications q q q q Anwendungen q Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q "Messen/Steuern/Regeln" Miniature photointerrupters Punched tape-readers Industrial electronics For control and drive circuits Semiconductor Group 1 1997-11-01 feo06367 1.4 1.0 Collector (BPX 83) Cathode (LD 263) fez06365 0.7 0.6 0 ... 5 3.5 3.0 3.6 3.2 Chip position LD 260 LD 262 ... LD 269 Typ Type LD 262 LD 263 LD 264 LD 265 LD 266 LD 267 LD 268 LD 269 LD 260 IRED Ma "A" Bestellnummer Gehause pro Zeile per Row Dimension "A" Ordering Code Package min. 2 3 4 5 6 7 8 9 10 4.5 7 9.6 12.1 14.6 17.2 19.7 22.3 24.8 max. 4.9 7.4 10 12.5 15 17.6 20.1 22.7 25.2 Q62703-Q70 Q62703-Q71 Q62703-Q72 Q62703-Q73 Q62703-Q74 Q62703-Q75 Q62703-Q76 Q62703-Q77 Q62703-Q78 Zeilenbauform, Leiterbandgehause, klares Epoxy-Gieharz, linsenformig, Anschlusse im 2.54-mm-Raster (1/10''), Kathodenkennzeichnung: Nase am Lotspie Lead frame arrays, transparent epoxy resin lens, solder tabs, lead spacing 2.54 mm (1/10''), cathode marking: projection at solder lead Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 80 80 5 50 1.6 70 750 650 Einheit Unit C C V mA A mW K/W K/W Top; Tstg Tj VR IF IFSM Ptot RthJA RthJL Semiconductor Group 2 1997-11-01 LD 260 LD 262 ... LD 269 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 50 mA, tp = 20 ms Spektrale Bandbreite bei 50 % von Imax Spectral bandwidth at 50 % of Imax IF = 50 m A, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktive Chipflache Dimension of the active chip area Abstand Chipoberflache bis Linsenscheitel Distance chip surface to lens top Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10%, bei IF = 50 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to 10 %, IF = 50 mA, RL = 50 Kapazitat, VR = 0 V Capacitance Durchlaspannung, IF = 50 mA, tp = 20 s Forward voltage Sperrstrom, VR = 5 V Reverse current Symbol Symbol peak Wert Value 950 Einheit Unit nm 55 nm 15 0.25 0.5 x 0.5 1.3 ... 1.9 1 Grad deg. mm2 mm mm s A LxB LxW H tr, tf Co VF IR 40 1.25 ( 1.4) 0.01 ( 1) 9 - 0.55 pF V A mW %/K Gesamtstrahlungsflu, IF = 50 mA, tp = 20 ms e Total radiant flux Temperaturkoeffizient von Ie bzw. e, IF = 50 mA Temperature coefficient of Ie or e, IF = 50 mA Temperaturkoeffizient von VF, IF = 50 mA Temperature coefficient of VF, IF = 50 mA Temperaturkoeffizient von peak, IF = 50 mA Temperature coefficient of peak, IF = 50 mA Strahlstarke, IF = 50 mA, tp = 20 ms Radiant intensity TCI TCV TC Ie - 1.5 0.3 typ. 5 ( 2.5) mV/K nm/K mW/sr Semiconductor Group 3 1997-11-01 LD 260 LD 262 ... LD 269 Relative spectral emission Irel = f () 100 % OHRD1938 Radiant intensity Ie = f (IF) Ie 100 mA OHR01039 Single pulse, tp = 20 s e 10 2 Max. permissible forward current IF = f (TA) 80 mA F 70 60 OHR01124 rel e (100 mA) 80 10 60 1 50 40 40 R thJL = 650 K/W 10 0 30 R thJA = 750 K/W 20 20 10 0 880 920 960 1000 nm 1060 10 -1 10 -2 10 -1 10 0 A F 10 1 0 0 20 40 60 80 C 100 TA , TL Forward current IF = f (VE), single pulse, tp = 20 s 10 1 A OHR01042 Permissible pulse handling capability IF = f (), TC = 25 C, duty cycle D = parameter 10 4 OHR02182 F F mA 10 0 typ. max. 10 3 D=0 0,005 0,01 0,02 D= T T F 0,05 0,1 0,2 10 -1 10 2 0,5 DC 10 -2 1 1.5 2 2.5 3 3.5 4 V 4.5 VF 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 Radiation characteristics Irel = f () 40 30 20 10 0 1.0 OHR01878 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-01 |
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